Effect of intense proton irradiation on properties of Josephson devices

Author

Pagano, S. ; Cristiano, R. ; Frunzio, L. ; Palmieri, V.G. ; Pepe, G. ; Gerbaldo, R. ; Ghigo, G. ; Gozzelino, L. ; Mezzetti, E. ; Cherubini, R.

Author_Institution

Ist. di Cibernetica, CNR, Arco Felice, Italy

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

2917

Lastpage

2920

Abstract

We have experimentally investigated the effects of intense proton beam irradiation (up to 10/sup 15/ p/cm/sup 2/) on Josephson junctions and junction arrays. The devices we have studied were realized using state of the art full-Nb technology, employing same materials and thicknesses of common Josephson digital circuit designs. We have analysed in detail the magnetic field dependence of the junction critical current, and the quasiparticle tunneling current, in order to observe possible occurrence of permanent changes produced by the ionizing particles. No evidence of radiation induced damage on the properties of the junctions has been found.

Keywords

Josephson effect; niobium; proton effects; Josephson device; Josephson junction; Josephson junction array; Nb; critical current; digital circuit; full-Nb technology; intense proton beam irradiation; ionizing particles; magnetic field; quasiparticle tunneling current; Belts; Electrodes; Fabrication; Josephson junctions; Laboratories; Large Hadron Collider; Niobium; Protons; Radiation detectors; Superconducting devices;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.621913

Filename

621913