Unique nondestructive inline metrology of TSVs by X-ray with model based library method

Author

Umehara, Yasutoshi ; Wen Jin

Author_Institution

Tokyo Electron Inc., Fuchu, Japan

fYear

2014

fDate

20-23 May 2014

Firstpage

233

Lastpage

236

Abstract

Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.

Keywords

X-ray microscopy; copper; etching; integrated circuit interconnections; integrated circuit measurement; scanning electron microscopy; spatial variables measurement; three-dimensional integrated circuits; 3D integrated circuits; Cu; SEM measurement; TSV; X-ray images; critical dimensions; depth profile measurement; model based library method; nondestructive inline profile metrology; pillar forming process; through-silicon-via; ultra-deep etching; Correlation; Image resolution; Libraries; Mathematical model; Metrology; Through-silicon vias; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

978-1-4799-5016-4

Type

conf

DOI

10.1109/IITC.2014.6831877

Filename

6831877