• DocumentCode
    1542853
  • Title

    A JFET-CMOS radiation-tolerant charge-sensitive preamplifier

  • Author

    Buttler, Werner ; Hosticka, Bedrich J. ; Lutz, Gerhard ; Manfredi, Pier F.

  • Author_Institution
    Fraunhofer Inst. of Microelectron., Circuits & Syst., Duisburg, West Germany
  • Volume
    25
  • Issue
    4
  • fYear
    1990
  • fDate
    8/1/1990 12:00:00 AM
  • Firstpage
    1022
  • Lastpage
    1024
  • Abstract
    A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFETs) and p-channel MOS has been realized for applications with microelectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose
  • Keywords
    CMOS integrated circuits; gamma-ray effects; junction gate field effect transistors; monolithic integrated circuits; nuclear electronics; preamplifiers; radiation hardening (electronics); 1.5×105 rad; JFET-CMOS; charge-sensitive; elementary particle physics; gamma ray exposure; junction field-effect transistors; microelectrode detectors; monolithic amplifier; n-channel JFET; n-well CMOS process; p-channel MOS; preamplifier; radiation-tolerant; CMOS process; CMOS technology; Detectors; Frequency; JFETs; Latches; MOSFETs; Master-slave; Preamplifiers; SPICE;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.58299
  • Filename
    58299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1542853