DocumentCode
1543223
Title
Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation
Author
Butt, Nauman Z. ; Johnson, Jeffrey B.
Author_Institution
Microelectron. Div., Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Volume
33
Issue
8
fYear
2012
Firstpage
1099
Lastpage
1101
Abstract
Transistor mismatch due to variability in short-channel effects induced by random dopant fluctuation is modeled in the light of 32-nm HKMG SOI dense SRAM bit-cell data. We present a simple analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode. The increased mismatch in saturation can be mitigated by optimizing the choice of halo and well implants for channel doping.
Keywords
SRAM chips; semiconductor doping; silicon-on-insulator; HKMG SOI dense SRAM bit-cell data; channel doping; linear mode; random dopant fluctuation; short-channel effect; size 32 nm; transistor mismatch analysis; transistor mismatch modeling; Analytical models; Data models; Doping; Implants; Random access memory; Semiconductor process modeling; Transistors; MOSFETs; Mismatch; short-channel effect;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2199075
Filename
6220234
Link To Document