10-μm GaAs/AlGaAs multiquantum well scanned array infrared imaging camera

Author

Bethea, C.G. ; Levine, B.F. ; Shen, V.O. ; Abbott, R.R. ; Hseih, S.J.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1118

Lastpage

1123

Abstract

A long-wavelength infrared imaging camera that uses a GaAs/Al_xGa_1-xAs quantum-well infrared photodetector (QWIP) array is demonstrated. Excellent noise equivalent temperature difference sensitivity (NEΔT<0.1°C) has been achieved. The long-wavelength cutoff for the QWIP used in this camera is at λ _c=10.7 μm with the peak response being at λ_p=9.8 μm. A peak detectivity of 2×10¹⁰ cm√Hz/W has been achieved at 77 K as well as an excellent pixel-to-pixel uniformity of 2%. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; image sensors; infrared detectors; infrared imaging; semiconductor quantum wells; 10.7 micron; 77 K; GaAs-Al_xGa_1-xAs; QWIP; detectivity; infrared imaging camera; long-wavelength cutoff; long-wavelength infrared imaging camera; multiquantum well scanned array; noise equivalent temperature difference; peak response; pixel-to-pixel uniformity; quantum-well infrared photodetector; semiconductors; thermography; two-dimensional arrays; Cameras; Detectors; Electromagnetic wave absorption; Electron optics; Fabrication; Gallium arsenide; Infrared imaging; Optical superlattices; Optical waveguides; Photodetectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78387

Filename

78387