A new concept silicon homojunction infrared sensor

Author

Tohyama, Shegeru ; Teranishi, N. ; Konuma, Kazuo ; Nishimura, Miyo ; Arai, Kouichi ; Oda, Eiji

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1136

Lastpage

1140

Abstract

A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infrared absorption and internal photoemission by free electrons in a conduction band in degenerate n⁺⁺-type silicon. The fabricated sensors have verified the basic operational principle and have shown that the detectable wavelength range extends to over 12 μm

Keywords

elemental semiconductors; image sensors; infrared detectors; infrared imaging; photovoltaic cells; silicon; 12 micron.; Si homojunction; degenerate n⁺⁺ type semiconductor; flexibly designed barrier height; infrared absorption; infrared sensor; internal photoemission; Electromagnetic wave absorption; Hot carriers; Infrared detectors; Infrared image sensors; Infrared sensors; Photovoltaic systems; Schottky barriers; Schottky diodes; Silicon; Solar power generation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78390

Filename

78390