DocumentCode
1544352
Title
Surface-emitting GaAs light-emitting diode/laser diode with modified coaxial transverse junction (CTJ) structure
Author
Yamada, H. ; Watanabe, H. ; Ito, H. ; Inaba, H.
Author_Institution
Tohoku Univ., Sendai, Japan
Volume
24
Issue
2
fYear
1988
fDate
1/21/1988 12:00:00 AM
Firstpage
77
Lastpage
78
Abstract
A novel surface-emitting light-emitting diode (LED)/laser diode (LD) with a coaxial transverse junction (CTJ) structure is demonstrated by modified structures of the well and hole types with improved thermal properties. A narrow emission pattern for the LED was realised due to the CTJ structure and preliminary results for laser operation were also obtained at low temperatures
Keywords
III-V semiconductors; gallium arsenide; light emitting diodes; semiconductor junction lasers; AlGaAs-GaAs; III-V semiconductors; hole type; laser diode; light-emitting diode; low temperatures; modified coaxial transverse junction; narrow emission pattern; semiconductor lasers; surface emitting LED; well type;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5516
Link To Document