DocumentCode
1544982
Title
Perspective Performances of MOS-Gated GTO in High-Power Applications
Author
Ronsisvalle, Cesare ; Enea, Vincenzo ; Abbate, Carmine ; Busatto, Giovanni ; Sanseverino, Annunziata
Author_Institution
STMicrolectronics, Catania, Italy
Volume
57
Issue
9
fYear
2010
Firstpage
2339
Lastpage
2343
Abstract
In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent on-state voltage and switching characteristics make MOS-GTO a very promising device for high-voltage power applications.
Keywords
power MOSFET; thyristors; MOS-Gated GTO; MOS-gated thyristor; blocking voltage; on-state voltage; power semiconductor device; switching characteristics; voltage 1.2 kV; voltage 4.5 kV; Anodes; Bipolar transistors; Cathodes; Conductivity; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor devices; Power semiconductor switches; Thyristors; Voltage; Power semiconductor devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2010.2055315
Filename
5518392
Link To Document