Electric field effect of SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ bi-layer grown by MBE and PLD

Author

Nakamura, T. ; Inada, H. ; Iiyama, M.

Author_Institution

Basic High-Technol. Lab., Sumitomo Electr. Ind. Ltd., Osaka, Japan

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

3540

Lastpage

3543

Abstract

Oxygen content and interface properties in SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/(STO/YBCO) bi-layer definitely affect electric properties of superconducting field effect transistor (SuFET). Good interface can be obtained by molecular beam epitaxy (MBE). Deposition pressure of MBE is too low to oxygenate the ultra-thin YBCO through STO. The oxygen pressure of pulsed laser deposition (PLD) is high enough to oxygenate the YBCO but YBCO film surface is degraded by impurity gases because of its high oxygen pressure. We successfully combined MBE and PLD methods to obtain STO/YBCO bilayers with both good interface and electrical properties. The transconductance of SuFET was 5mS/cm, which is higher than SuFET grown by all-MBE and all-PLD.

Keywords

barium compounds; dielectric thin films; field effect transistors; high-temperature superconductors; molecular beam epitaxial growth; pulsed laser deposition; strontium compounds; superconducting thin films; superconducting transistors; yttrium compounds; SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/; SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ bilayer; electric field effect; electrical properties; growth; interface properties; molecular beam epitaxy; oxygen content; pulsed laser deposition; superconducting field effect transistor; transconductance; FETs; Gas lasers; Molecular beam epitaxial growth; Optical pulses; Oxygen; Pulsed laser deposition; Superconducting epitaxial layers; Superconducting films; Surface emitting lasers; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.622160

Filename

622160