Development of a 3/spl times/3 micromachined millimeter wave SIS imaging array

Author

de Lange, G. ; Rahman, A. ; Duerr, E. ; Qing Hu ; Huang, H. ; Lichtenberger, A.W.

Author_Institution

Res. Lab. of Electron., MIT, Cambridge, MA, USA

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

3593

Lastpage

3596

Abstract

The design of, and preliminary results from, a 3/spl times/3 micromachined millimeter wave focal plane imaging array with superconducting tunnel junctions as mixing elements are presented. The array operates in the 175-205 GHz frequency range. Micromachined horn antennas consist of a dipole antenna fabricated on a thin dielectric membrane inside a pyramidal cavity etched in silicon. The relative ease of fabricating arrays of micromachined antennas make them of particular interest in the development of imaging arrays. DC tests of the array show that the junction characteristics are uniform across the array. The devices are sufficiently cooled. Local oscillator power has been coupled to the different elements in the array.

Keywords

electron device manufacture; focal planes; horn antennas; micromachining; millimetre wave imaging; superconducting device testing; superconductive tunnelling; superconductor-insulator-superconductor mixers; 175 to 205 GHz; DC tests; SIS imaging array; dipole antenna; focal plane imaging array; horn antennas; junction characteristics; local oscillator power; micromachining; millimeter wave imaging; mixing elements; pyramidal cavity; superconducting tunnel junctions; thin dielectric membrane; Antenna arrays; Biomembranes; Dielectrics; Dipole antennas; Etching; Frequency; Horn antennas; Josephson junctions; Silicon; Superconducting devices;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.622179

Filename

622179