High-speed resonant-tunneling photodetectors with low-switching energy

Author

Moise, T.S. ; Kao, Y.C. ; Goldsmith, C.L. ; Schow, C.L. ; Campbell, J.C.

Author_Institution

Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA

Volume

9

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

803

Lastpage

805

Abstract

By taking advantage of the negative differential resistance characteristics of a resonant tunneling heterostructure, we have developed a novel photodetector which exhibits responsivities and gain-bandwidth efficiency products in excess of 10 A/W and 10 GHz/spl middot/A/W, respectively. Low switching energy (30 fJ) and bit-error rates of less than 10/sup -9/ at data rates at 2 Gb/s have been achieved with this optically-switched resonant-tunneling diode.

Keywords

high-speed optical techniques; optical receivers; photodetectors; resonant tunnelling diodes; semiconductor switches; 2 Gbit/s; 30 fJ; InAlAs-AlAs-InGaAs-AlAs-InAlAs; InP; bit-error rates; data rates; gain-bandwidth efficiency products; high-speed resonant-tunneling photodetectors; low-switching energy; negative differential resistance characteristics; optical receivers; optically-switched resonant-tunneling diode; resonant tunneling heterostructure; responsivities; Circuits; Diodes; High speed optical techniques; Indium gallium arsenide; Optical amplifiers; Optical receivers; Optical sensors; Photodetectors; Resonant tunneling devices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.584996

Filename

584996