• DocumentCode
    1545637
  • Title

    32 Gbit/s super-dynamic decision IC using 0.13 μm GaAs MESFETs with multilayer-interconnection structure

  • Author

    Otsuji, T. ; Murata, K. ; Tokumitsu, M. ; Sugitani, S.

  • Author_Institution
    NTT Syst. Electron. Lab., Kanagawa, Japan
  • Volume
    33
  • Issue
    6
  • fYear
    1997
  • fDate
    3/13/1997 12:00:00 AM
  • Firstpage
    480
  • Lastpage
    482
  • Abstract
    The authors report on a super-dynamic decision IC using 0.13 μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32 Gbit/s decision operation was achieved
  • Keywords
    III-V semiconductors; MESFET integrated circuits; decision circuits; gallium arsenide; integrated circuit interconnections; 0.13 micron; 32 Gbit/s; GaAs; GaAs MESFET; high-speed circuit; multilayer interconnection; super-dynamic decision IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970323
  • Filename
    585053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545637