DocumentCode
1545858
Title
0.15 μm double modulation doped InAs-inserted-channel MODFETs: gate recess for optimum RF performances
Author
Xu, D. ; Heiß, H. ; Kraus, S. ; Sexl, M. ; Böhm, G. ; Tränkle, G. ; Weimann, G. ; Abstreiter, G.
Author_Institution
Walter-Schottky-Inst., Tech. Univ. Munchen, Germany
Volume
33
Issue
6
fYear
1997
fDate
3/13/1997 12:00:00 AM
Firstpage
532
Lastpage
533
Abstract
The effects of gate recess etch profiles on DC and RF characteristics of double-sided MODFETs are investigated. Transconductance is as high as 1.3 S/mm at a channel current of ~500 mA/mm. It is found that fT, of 220 GHz and fmass of 280 GHz can be realised for 0.15 μm T-gate, with a gate recess of appropriate width. The RF intrinsic elements are extracted and analysed to explain the improved fmax. The breakdown voltage of ~4 V can be achieved for devices with a 50 nm wide lateral recess
Keywords
III-V semiconductors; doping profiles; etching; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.15 micron; 1.3 S/mm; 220 GHz; 280 GHz; 4 V; DC characteristics; EHF; InAs-inserted-channel MODFETs; InGaAs:Si-InGaAs-InAs; InP; InP substrate; MM-wave device; T-gate type; breakdown voltage; double modulation doped MODFETs; double-sided MODFETs; gate recess etch profiles; optimum RF performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970296
Filename
585086
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