DocumentCode
1546183
Title
Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient
Author
Joo, Moon-Sig ; Yeo, In-Seok ; Lee, Chan-Ho ; Cho, Heung-Jae ; Jang, Se-Aug ; Lee, Sahng-Kyoo
Author_Institution
Semicond. Adv. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
Volume
20
Issue
9
fYear
1999
Firstpage
445
Lastpage
447
Abstract
Effects of N/sub 2/O pressure during oxynitridation on the characteristics of ultrathin gate dielectrics have been investigated. Reoxidation in N/sub 2/O ambient showed three distinguished oxidation regions as a function of tube pressure; that is, enhancement at 10-40 torr, retardation at 40-100 torr, and enhancement at 100-600 torr. The N/sub 2/O-nitridation at 40 torr incorporated much less nitrogen in oxide bulk than that at near-atmospheric pressure. The 40 torr N/sub 2/O-nitridation case exhibited about 70% of nitrogen incorporation at the Si/SiO/sub 2/ interface compared to that of the 600 torr N/sub 2/O-nitridation case. The low-pressure N/sub 2/O-nitridation at 40 torr results in improvement of TDDB of gate dielectrics and the transconductance of nMOSFETs compared to the nitridation at near-atmospheric pressure. These data suggest that low pressure oxynitridation should be more recommendable for device application.
Keywords
MOSFET; annealing; dielectric thin films; electric breakdown; nitridation; oxidation; 10 to 600 torr; N/sub 2/O; N/sub 2/O annealing; TDDB; nMOSFET; nitridation; oxidation; oxynitridation; transconductance; ultrathin gate dielectric; Annealing; Dielectrics; Electron traps; Fabrication; Hydrogen; Interface states; MOSFET circuits; Nitrogen; Oxidation; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.784447
Filename
784447
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