• DocumentCode
    1546323
  • Title

    Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

  • Author

    Lacord, Joris ; Huguenin, Jean-Luc ; Skotnicki, Thomas ; Ghibaudo, Gérard ; Boeuf, Frédéric

  • Author_Institution
    STMicroelectronics, Crolles, France
  • Volume
    59
  • Issue
    9
  • fYear
    2012
  • Firstpage
    2534
  • Lastpage
    2538
  • Abstract
    In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including short-channel and quantum effects for fully depleted or undoped double-gate MOS devices.
  • Keywords
    Doping; Electric potential; Electron devices; Logic gates; Numerical models; Semiconductor process modeling; Threshold voltage; Double-gate device; drain-induced barrier lowering (DIBL); short-channel effects (SCEs); subthreshold slope; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2201942
  • Filename
    6222323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1546323