Doping study of superconductivity in YBCO films by ion implantation

Author

Hong, S.H. ; Xu, H. ; Gao, E. ; Sahba, S. ; Ma, Q.Y.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1579

Lastpage

1582

Abstract

We present the results of doping by ion implantation in YBCO films with 5 different ions (Ca, Na, Mg, Be, Li). Ion selection is based on the difference of ionic radii and heat of formation value. Ionic radii plays a critical role to crystal damage in the implantation process. Ni ions were implanted to YBCO films with different doses so that the resistance of the implanted film was varied. Different values of resistance of the Ni implanted structures were applied to the fabrication of chip resistors.

Keywords

barium compounds; high-temperature superconductors; ion beam effects; ion implantation; superconducting integrated circuits; superconducting thin films; yttrium compounds; HTSC; Ni implanted structures; YBaCuO films; YBaCuO:Be; YBaCuO:Ca; YBaCuO:Li; YBaCuO:Mg; YBaCuO:Na; YBaCuO:Ni; chip resistors; crystal damage; fabrication; heat of formation; ion implantation; ion selection; ionic radii; superconductivity; Doping; High temperature superconductors; Ion implantation; Magnetic materials; Optical materials; Semiconductor materials; Superconducting films; Superconducting materials; Superconductivity; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784697

Filename

784697