• DocumentCode
    1547389
  • Title

    Flash memory cells-an overview

  • Author

    Pavan, Paolo ; Bez, Roberto ; Olivo, Piero ; Zanoni, Enrico

  • Author_Institution
    Dipt. di Sci. dell´´Ingegneria, Modena Univ., Italy
  • Volume
    85
  • Issue
    8
  • fYear
    1997
  • fDate
    8/1/1997 12:00:00 AM
  • Firstpage
    1248
  • Lastpage
    1271
  • Abstract
    The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories
  • Keywords
    EPROM; integrated circuit reliability; integrated memory circuits; memory architecture; reviews; NVM; architectural solutions; cell size reduction; cell structures; charge-injection mechanisms; circuit designs; device structures; flash memory cells; memory technology; nonvolatile memories; processing technologies; review; semiconductor memory; Application software; Economic forecasting; Flash memory; Flash memory cells; Hard disks; Nonvolatile memory; PROM; Power supplies; Random access memory; Semiconductor memory;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.622505
  • Filename
    622505