Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors

Author

Tang, R. ; Ford, J. ; Pryor, B. ; Anandakugan, S. ; Welch, P. ; Burt, C.

Author_Institution

Commun. Products Lab., Motorola Inc., Mesa, AZ, USA

Volume

18

Issue

9

fYear

1997

Firstpage

426

Lastpage

428

Abstract

A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f_max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f_max of 45 GHz, 1/f noise corner frequency of 700 Hz at I/sub B/=1.0 μA, NF/spl les/1.0 dB at 900 MHz. Early voltage V/sub A/ of /spl ges/200 V is achieved, while maintaining a BV/sub CEO/ of /spl ges/8.0 V.

Keywords

1/f noise; Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; optimisation; passivation; semiconductor device noise; semiconductor materials; 0.5 dB; 1 dB; 45 GHz; 900 MHz; B ions; RF performance; SiGe; SiGe HBT; UHF device; extrinsic base optimization; extrinsic polysilicon base; heterojunction bipolar transistors; passivated epi-base; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Noise reduction; Radio frequency; Silicon germanium; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.622518

Filename

622518