DocumentCode
1547767
Title
SiC device edge termination using finite area argon implantation
Author
Alok, Dev ; Baliga, B.Jayant
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
44
Issue
6
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
1013
Lastpage
1017
Abstract
In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 μm of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area
Keywords
Schottky diodes; amorphisation; argon; electric breakdown; ion implantation; leakage currents; silicon compounds; wide band gap semiconductors; 6H-SiC Schottky barrier diodes; Ar; SiC; device edge termination; finite area argon implantation; ideal plane parallel breakdown voltages; leakage current; limited area amorphization; reverse bias voltages; Argon; Conductivity; Implants; Leakage current; Numerical simulation; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.585559
Filename
585559
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