• DocumentCode
    1547793
  • Title

    Reduction of leakage current in chemical-vapor-deposited Ta2 O5 thin films by furnace N2O annealing

  • Author

    Sun, S.C. ; Chen, T.F.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    1027
  • Lastpage
    1029
  • Abstract
    In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films. Compared with furnace annealing in O2 (FO) and rapid thermal annealing in N 2O (N2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB)
  • Keywords
    CVD coatings; annealing; dielectric thin films; electric breakdown; leakage currents; tantalum compounds; N2O; Ta2O5; chemical-vapor-deposited tantalum penta-oxide thin film; furnace N2O annealing; leakage current; time-dependent dielectric breakdown; Capacitors; Chemical vapor deposition; Dielectric thin films; Furnaces; Leakage current; Random access memory; Rapid thermal annealing; Rapid thermal processing; Sun; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.585562
  • Filename
    585562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1547793