• DocumentCode
    1547871
  • Title

    Nondestructive magneto-optical characterization of natural and artificial defects on 3" HTSC wafers at liquid nitrogen temperature

  • Author

    Eisenmenger, J. ; Schiessling, J. ; Bolz, U. ; Runge, B.-U. ; Leiderer, P. ; Lorenz, M. ; Hochmuth, H. ; Wallenhorst, M. ; Dotsch, H.

  • Author_Institution
    Fakultat fur Phys., Konstanz Univ., Germany
  • Volume
    9
  • Issue
    2
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    1840
  • Lastpage
    1843
  • Abstract
    Double-sided 3" HTSC wafers were characterized by the magneto-optic technique. The presented apparatus allows a nondestructive and fast detection of local and extended inhomogeneities in the critical current density with high lateral resolution in the micrometer range. Additional gold-layers on the HTSC wafers, as they are sometimes used for the device production, do not influence the characterization result. The high sensitivity of the presented apparatus allows even the detection of local defects at higher temperature (77 K) where contrasts in the critical current are weaker and the magneto-optical characterization of HTSC thin films is much more difficult than at lower temperatures. So the apparatus can be used even under conditions where cooling with liquid helium or closed-cycle refrigerators is not available. The sensitivity was tested on natural and artificial defects, the latter being prepared by means of a focused laser beam.
  • Keywords
    critical current density (superconductivity); crystal defects; high-temperature superconductors; magneto-optical effects; 3 in; 3" HTSC wafers; 77 K; critical current density; defects; extended inhomogeneities; high temperature superconductor; magneto-optical characterization; Cooling; Critical current; Critical current density; Magnetooptic devices; Production; Refrigerators; Temperature sensors; Testing; Transistors;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.784815
  • Filename
    784815