• DocumentCode
    1548115
  • Title

    Electrical and materials characterization of a robust YBCO multilayer film process for HTS circuit applications

  • Author

    Pettiette-Hall, C.L. ; Murduck, J. ; Burch, J.F. ; Sergant, M. ; Hu, R. ; Cordromp, J. ; Aquilino, H.

  • Author_Institution
    TRW Inc., Redondo Beach, CA, USA
  • Volume
    9
  • Issue
    2
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    1998
  • Lastpage
    2001
  • Abstract
    We have developed a 2" multilayer HTS process that contains four epitaxial layers (3 superconducting and one dielectric) and up to 4 additional non-epitaxial layers. Employing n-factorial and Taguchi designed experiments, we have improved crossover critical currents by 45/spl times/ and via critical currents by 60/spl times/. We use the DOE approach to quantitatively compare processing factors and identify those which are electrically significant. Transmission Electron Microscopy confirms the morphological changes which cause the electrical response. This article highlights the history of our multilayer process, using both TEM and electrical results to show how process modifications have led to a robust multilayer process for HTS circuit applications.
  • Keywords
    barium compounds; critical current density (superconductivity); high-temperature superconductors; superconducting integrated circuits; superconducting thin films; transmission electron microscopy; yttrium compounds; 2 in; HTS circuit applications; TEM; YBa/sub 2/Cu/sub 3/O/sub 7/; crossover critical currents; electrical response; high temperature superconductor; materials characterization; morphological changes; robust YBCO multilayer film; Critical current; Dielectric materials; Epitaxial layers; High temperature superconductors; Nonhomogeneous media; Robustness; Superconducting epitaxial layers; Superconducting materials; US Department of Energy; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.784855
  • Filename
    784855