• DocumentCode
    1548134
  • Title

    Transient behavior of adjustable threshold a-Si:H/a-SiC:H three-color detector

  • Author

    Irrera, Fernanda ; Lemmi, Francesco ; Palma, Fabrizio

  • Author_Institution
    Dipartimento di Ingegneria Elettronica, Rome Univ., Italy
  • Volume
    44
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    1410
  • Lastpage
    1416
  • Abstract
    In this paper, we investigate the transient behavior of a-Si:H/a-SiC:H adjustable-threshold three-color detectors (ATCDs) for applications in bidimensional large area image sensors. Red, green, and blue color sensing in the charge integration regime is demonstrated, and the transient mechanisms of charge and discharge of the equivalent capacitance are discussed by means of load curve diagrams. The possibility of driving 2-D arrays of ATCDs is discussed by means of a test circuit simulating the row select TFT and the data line capacitance by discrete components. Readout times on the microsecond timescale and saturation times three orders of magnitude greater have been obtained under 0.1 mW/cm2 illumination, resulting in the possibility of scanning 1000 rows. Finally, an equivalent circuit is introduced and solved by AIM-SPICE, and simulations of the static and dynamic behavior are presented
  • Keywords
    amorphous semiconductors; capacitance; elemental semiconductors; equivalent circuits; hydrogen; image sensors; photodetectors; semiconductor materials; silicon; silicon compounds; thin film transistors; transient analysis; 2D arrays; AIM-SPICE; Si:H-SiC:H; adjustable-threshold three-color detectors; bidimensional large area image sensors; charge integration regime; data line capacitance; dynamic behavior; equivalent capacitance; equivalent circuit; load curve diagrams; readout times; row select TFT; saturation times; static behavior; transient behavior; Amorphous silicon; Capacitance; Circuit simulation; Circuit testing; Detectors; Image sensors; Photonic band gap; Sensor arrays; Steady-state; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.622595
  • Filename
    622595