Effects of fluorine implants on induced charge components in gate-oxides under constant-current Fowler-Nordheim stress

Author

Nguyen, Tan Khai ; Landsberger, Les M. ; Jean, Claude ; Logiudice, Vito

Author_Institution

Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada

Volume

44

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1432

Lastpage

1440

Abstract

Charge defects in MOS capacitors formed with fluorine-incorporated oxides are analyzed by Fowler-Nordheim (F-N) tunnelling injection stress. Like previous studies, fluorinated gate oxides prove to have better performance in aspects of overall flatband voltage shifts and interface trapped charge density. However, these advantages result from more complex combinations of effects. In this study, comparisons of induced charging components between fluorinated and control oxides expose complicated variations of trapped charge generation in both bulk and interface regions. A relationship is found between the amount of fluorine at/near the Si/SiO₂ interface and induced charges in the bulk

Keywords

MOS capacitors; electron traps; elemental semiconductors; internal stresses; silicon; silicon compounds; tunnelling; MOS capacitors; Si-SiO₂; constant-current Fowler-Nordheim stress; gate-oxides; induced charge components; interface trapped charge density; overall flatband voltage shifts; trapped charge generation; Electrons; Implants; Interface states; Ionizing radiation; MOS capacitors; Microelectronics; Resistance; Stress; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.622598

Filename

622598