A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Author

Roldán, J.B. ; Gámiz, F. ; López-Villanueva, J.A.

Author_Institution

Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain

Volume

44

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1447

Lastpage

1453

Abstract

A new experimental method for determining the dependence of the electron mobility on the longitudinal electric field has been developed. The development, validation, and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields, we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method. A saturation-velocity value higher than other previously reported experimental ones was observed. This saturation-velocity value is similar to those calculated with Monte Carlo MOSFET simulators

Keywords

MOSFET; electron mobility; iterative methods; semiconductor device models; MOSFETs; closed-loop evaluation; electron mobility; longitudinal-electric field; mobility curves; saturation velocity; transverse-electric fields; Circuit simulation; Delay; Dispersion; Electric variables measurement; Electron mobility; Equations; Logic circuits; MOSFET circuits; Monte Carlo methods; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.622600

Filename

622600