• DocumentCode
    1548319
  • Title

    The 2-D-3-D crossover in modulation-doped GaAs-Ga1-xAl xAs quantum wells

  • Author

    Qu, Fanyao ; Morais, P.C.

  • Author_Institution
    Dept. de Fisica, Brasilia Univ., Brazil
  • Volume
    33
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    1492
  • Lastpage
    1497
  • Abstract
    We report on a method to analyze the 2-D-3-D crossover in n-type modulation-doped quantum wells. Finite well barrier, first and second subband population, many-body effects, and residual doping are included in our calculation. We found that the 2-D-3-D crossover remarkably depends not only upon the geometrical parameters, as for instance, the spacer layer width and quantum-well width, but also upon a residual p-type doping intentionally introduced. A diagram showing the 2-D-3-D dimensional crossover is presented
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor doping; semiconductor quantum wells; 2-D-3-D crossover; GaAs-Ga1-xAlxAs quantum wells; GaAs-GaAlAs; finite well barrier; geometrical parameters; many-body effects; modulation-doped; n-type modulation-doped quantum wells; quantum-well width; residual doping; residual p-type doping; spacer layer width; subband population; Doping; Epitaxial layers; Optical modulation; Optical scattering; Photonic band gap; Plasma density; Plasma materials processing; Quantum wells; Semiconductor materials; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.622628
  • Filename
    622628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1548319