2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si

Author

Subbarao, Saligrama N. ; Bechtle, Daniel W. ; Menna, Raymond J. ; Connolly, John C. ; Camisa, Raymond L. ; Narayan, Yegna

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

38

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1199

Lastpage

1203

Abstract

The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is compatible with monolithic microwave integrated circuit (MMIC) technology and (b) the p-i-n detector is fabricated directly on the GaAs buffer layer without p⁺ and n⁺ implants, thus resulting in a simplified fabrication process. The operation of the circuit is compared to that of a similar circuit fabricated on a GaAs substrate. A quantum efficiency exceeding 60% has been measured for the p-i-n detectors. The 2- to 4-GHz frequency responses of one- and two-stage p-i-n/FET preamplifiers are presented. The response varies ±3 dB over the frequency band

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency response; gallium arsenide; infrared detectors; integrated optoelectronics; microwave amplifiers; silicon; 2 to 4 GHz; 60 percent; GaAs-Si; MMIC technology compatibility; Si; frequency responses; monolithic lateral p-i-n photodetector; multistage MESFET amplifiers; p-i-n/FET preamplifiers; quantum efficiency; Broadband amplifiers; Circuits; Detectors; Fabrication; Frequency; Gallium arsenide; MESFETs; MMICs; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.58643

Filename

58643