A new static induction thyristor (SITh) analytical model

Author

Wang, Jue ; Williams, Barry W.

Author_Institution

Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK

Volume

14

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

866

Lastpage

876

Abstract

In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed

Keywords

SPICE; semiconductor device models; thyristors; PSPICE; analytical model; convergence; device lifetime; device structure; device temperature; dynamic characteristics prediction; internal physical operating mechanisms; modelling accuracy; nonquasi-static model; simulation speed; static characteristics prediction; static induction thyristor; Analytical models; Convergence; Electrons; Insulated gate bipolar transistors; Numerical simulation; SPICE; Semiconductor device doping; Temperature; Thyristors; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.788483

Filename

788483