• DocumentCode
    1550868
  • Title

    High-cycle fatigue of single-crystal silicon thin films

  • Author

    Muhlstein, Christopher L. ; Brown, Stuart B. ; Ritchie, Robert O.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA
  • Volume
    10
  • Issue
    4
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    593
  • Lastpage
    600
  • Abstract
    When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (~20 μm thick) single crystal silicon specimens were tested to failure in a controlled air environment (30±0.1°C, 50±2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1×106 to 1×1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation
  • Keywords
    elemental semiconductors; fatigue; fracture mechanics; micromechanical devices; semiconductor thin films; silicon; 10 s to 48 day; 20 micron; 30 C; Si; alternating stresses; brittle materials; damage accumulation; fracture surface evaluation; high cycle fatigue; notched cantilever beams; premature failure; single-crystal Si films; Ceramics; Crystalline materials; Degradation; Fatigue; Humidity control; Semiconductor thin films; Silicon; Solids; Stress; Testing;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.967383
  • Filename
    967383