DocumentCode
1550868
Title
High-cycle fatigue of single-crystal silicon thin films
Author
Muhlstein, Christopher L. ; Brown, Stuart B. ; Ritchie, Robert O.
Author_Institution
Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA
Volume
10
Issue
4
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
593
Lastpage
600
Abstract
When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (~20 μm thick) single crystal silicon specimens were tested to failure in a controlled air environment (30±0.1°C, 50±2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1×106 to 1×1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation
Keywords
elemental semiconductors; fatigue; fracture mechanics; micromechanical devices; semiconductor thin films; silicon; 10 s to 48 day; 20 micron; 30 C; Si; alternating stresses; brittle materials; damage accumulation; fracture surface evaluation; high cycle fatigue; notched cantilever beams; premature failure; single-crystal Si films; Ceramics; Crystalline materials; Degradation; Fatigue; Humidity control; Semiconductor thin films; Silicon; Solids; Stress; Testing;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/84.967383
Filename
967383
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