A high heat flux IGBT micro exchanger setup

Author

Meysenc, Luc ; Saludjian, Lucas ; Bricard, Alain ; Rael, Stéphane ; Schaeffer, Christian

Author_Institution

Lab. d´´Electrotech. de Grenoble, St. Martin d´´Heres, France

Volume

20

Issue

3

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

334

Lastpage

341

Abstract

Much progress has been made over the past few years in the design of power electronic components leading to increasing development of IGBT transistors. Now IGBT´s can dissipate power densities higher than 400 W/cm² and the thermal environment has become a major factor in their behavior. The aim of this paper is to demonstrate the high performance of a silicon microchannel setup. First, a thermal study enables the theoretical behavior of the setup to be analyzed. Then an optimization method based on genetic algorithms allows us to determine the best sizes for the microchannels. Finally, the theoretical results are compared with experimental measurements

Keywords

genetic algorithms; heat exchangers; heat sinks; insulated gate bipolar transistors; power transistors; semiconductor device packaging; silicon; thermal analysis; thermal resistance; IGBT; Si; Si microchannel setup; genetic algorithms; high heat flux micro exchanger setup; optimization method; power electronic components; power transistors; thermal environment; Electrical resistance measurement; Heat sinks; Insulated gate bipolar transistors; Microchannel; Optimization methods; Power electronics; Silicon; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.623028

Filename

623028