Large-signal characterization of AlGaAs/GaAs HBT´s

Author

Li, Bin ; Prasad, Sheila ; Yang, Li-Wu ; Wang, S.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

47

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1743

Lastpage

1746

Abstract

A modified Ebers-Moll model is developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT´s). The self-heating effect is modeled by a thermal-electrical sub-circuit. The model is verified by comparing the large-signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low DC power dissipation. The discrepancy between simulation and measurement when the HBT is biased at high DC power dissipation is explained by considering the self-heating effect under large-signal RF excitation

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; thermal analysis; AlGaAs-GaAs; AlGaAs/GaAs HBT; DC power dissipation; heterojunction bipolar transistors; large-signal RF excitation; large-signal RF measurement; large-signal RF simulation; large-signal characterization; modified Ebers-Moll model; self-heating effect; thermal-electrical sub-circuit; Capacitance; Circuit simulation; Circuit synthesis; Contact resistance; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Radio frequency; Semiconductor diodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.788597

Filename

788597