• DocumentCode
    1551592
  • Title

    Optical characterisation of quantum well infra-red detector structures

  • Author

    Guzman, Armando ; Sánchez-Rojas, J.L. ; Tijero, J.M.G. ; Sánchez, J.J. ; Hernando, J. ; Calleja, E. ; Muñoz, E. ; Vergara, G. ; Montojo, M.T. ; Gomez, Luis J. ; Rodriiguez, P. ; Almazan, R. ; Verdú, M.

  • Author_Institution
    ETSI Telecommun., Ciudad Univ., Madrid, Spain
  • Volume
    146
  • Issue
    2
  • fYear
    1999
  • fDate
    8/1/1999 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    Optical characterisation of GaAs-AlGaAs quantum well infra-red photodetector (QWIP) structures by interband photoluminescence (PL) spectroscopy has been performed. The effect on the low temperature PL spectrum of both the doping concentration in the wells and the presence of thin lateral barriers is analysed. In addition to the main peak (e1-hh1), a second peak at lower energy is observed in doped structures and attributed to a donor-to-acceptor transition. The broadening of the e1-hh1 peak when the doping in the wells is increased is interpreted in terms of the bandfilling effect in the wells. An additional broadening appears when thin lateral barriers with higher content are introduced in the structure. Responsivities as high as 0.5 A/W without external coupling mechanisms of the incident light have been measured in samples showing the above-mentioned features in the PL spectra
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs quantum well infra-red photodetector; PL spectra; QW IR detector structures; bandfilling effect; donor-to-acceptor transition; doped structures; doping concentration; e1-hh1 peak broadening; external coupling mechanisms; incident light; interband photoluminescence spectroscopy; low temperature PL spectrum; optical characterisation; quantum well infra-red detector structures; responsivities; thin lateral barriers;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19990183
  • Filename
    788755