An in-circuit noncontacting measurement method for S-parameters and power in planar circuits

Author

Stenarson, Jörgen ; Yhland, Klas ; Wingqvist, Claes

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

49

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2567

Lastpage

2572

Abstract

A method for measuring the reflection coefficient and absolute power in the propagating waves from a circuit embedded in a planar circuit environment is presented. The method utilizes a pair of inductive and capacitive probes. The standard one-port vector-network-analyzer calibration is extended to allow the measurement of power in the forward and backward waves. Experimental results are presented for measurements between 700 MHz and 20 GHz. Good agreement between the new noncontacting method and a standard coaxial measurement method is demonstrated up to 12 GHz for power and up to 14 GHz for the reflection coefficient. The method is useful for in-circuit testing of open transmission-line structures, e.g., microstrip

Keywords

S-parameters; calibration; circuit testing; microwave circuits; microwave measurement; network analysers; power measurement; 700 MHz to 20 GHz; S-parameters; absolute power; backward wave; calibration; capacitive probe; forward wave; in-circuit testing; inductive probe; microstrip structure; microwave planar circuit; noncontact measurement; one-port vector network analyzer; reflection coefficient; transmission line; Calibration; Circuits; Coaxial components; Measurement standards; Power measurement; Probes; Reflection; Scattering parameters; Testing; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.971651

Filename

971651