• DocumentCode
    1553956
  • Title

    Extension of the VR discretization scheme for velocity saturation

  • Author

    Patil, Mahesh B.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
  • Volume
    18
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1508
  • Lastpage
    1511
  • Abstract
    It is argued that the vector resolution discretization scheme is not consistent with the velocity saturation model. As a result, the simulation results show dependence on grid orientation. A modification is then presented to overcome this difficulty. Simulation examples are discussed to clearly demonstrate the improvement obtained with the new scheme. Finally, some comments are made regarding the convergence behaviour of the new scheme
  • Keywords
    carrier mobility; convergence of numerical methods; semiconductor device models; 2D semiconductor device simulation; VR discretization scheme; convergence behaviour; grid orientation; vector resolution; velocity saturation; Charge carrier processes; Convergence; Current density; Equations; Grid computing; Integrated circuit technology; Robustness; Semiconductor devices; Virtual reality;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.790627
  • Filename
    790627