Electromigration characteristics of TiN barrier layer material

Author

Tao, Jiang ; Cheung, Nathan W. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

230

Lastpage

232

Abstract

Electromigration reliability of TiN barrier layer itself has been studied. Our results show no electrically measurable electromigration. Resistance increase and open failure under high density current stress are apparently due to a purely thermally activated process with an activation energy of 1.5 eV. TiN resistance is projected to be stable for 10 years if the temperature of the hottest spot in TiN is kept below 408/spl deg/C, which together with electrical sheet resistance and thermal resistance determine the acceptable current density in TiN.

Keywords

titanium compounds; 10 year; 408 C; 65 muohmcm; IC interconnect; TiN; TiN barrier layer material; TiN resistance stability; acceptable current density; activation energy; electrical sheet resistance; electromigration reliability; high density current stress; hot spot temperature; multilayer metallization; open failure; resistance increase; thermal resistance; thermally activated process; Current density; Electric resistance; Electromigration; Metallization; Temperature; Testing; Thermal resistance; Thermal stresses; Tin; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790718

Filename

790718