Passive modelocking due to diagonal optical transition in asymmetric double quantum well

Author

Buyalo, M.S. ; Gadzhiyev, I.M. ; Gorbacevich, A.A. ; Egorov, A.Yu. ; Bakshaev, I.O. ; Zadiranov, Yu.M. ; Il´inskaya, N.D. ; Portnoi, E.L.

Author_Institution

Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

Volume

48

Issue

14

fYear

2012

Firstpage

870

Lastpage

872

Abstract

Passive modelocking (PML) due to diagonal optical transition was observed in two coupled asymmetric double quantum well laser structures for the first time. Two InGaAs/GaAs QW structures with different barrier width between wells were compared. Passive modelocking in thin barrier structures was realised at reverse biases between 0.7-1.1 V when carrier tunnelling takes place. In structures with a thick barrier, PML was observed only at reverse biases above 3.3 V when the absorption edge is shifted to the lasing wavelength due to the quantum confinement Stark effect.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser mode locking; light absorption; quantum confined Stark effect; quantum well lasers; tunnelling; InGaAs-GaAs; absorption edge; asymmetric double quantum well laser structure; barrier structure; carrier tunnelling; diagonal optical transition; lasing wavelength; passive modelocking; quantum confinement Stark effect; voltage 0.7 V to 1.1 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.1181

Filename

6235173