The performance of double active region InGaAsP lasers

Author

Champagne, A. ; Maciejko, Roman ; Glinski, Jan M.

Author_Institution

Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada

Volume

27

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

2238

Lastpage

2247

Abstract

The light-current characteristic and temperature behavior of the double-carrier-confinement (DCC) InGaAsP laser are shown to be largely determined by Auger recombination. The carrier distributions in the two active regions, especially their relative fractions, play a major role in device behavior. A self-consistent, comprehensive numerical laser model is used to analyze a set of devices showing that superlinearity and possibly bistability are due to saturable absorption in the second active region and that a high characteristic temperature is usually tied with a higher threshold current density because of substantial Auger recombination rates in this type of device

Keywords

Auger effect; III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; laser theory; optical bistability; optical saturable absorption; semiconductor device models; semiconductor junction lasers; Auger recombination; bistability; carrier distributions; double active region InGaAsP lasers; double-carrier-confinement; high characteristic temperature; laser model; light-current characteristic; recombination rates; saturable absorption; semiconductors; superlinearity; temperature behavior; threshold current density; Heterojunctions; Laser modes; Laser theory; Laser tuning; Optical materials; Poisson equations; Radiative recombination; Spontaneous emission; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.97267

Filename

97267