• DocumentCode
    1555618
  • Title

    Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

  • Author

    Chen, Ming-Jer ; Huang, Huan-Tsung ; Chen, Jyh-Huei ; Su, Chi-Wen ; Hou, Chin-Shan ; Liang, Mong-Song

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    20
  • Issue
    10
  • fYear
    1999
  • Firstpage
    523
  • Lastpage
    525
  • Abstract
    The cell-based analytic statistical model, with the cell area A/sub O/ and the critical trap number per cell n/sub BD/ both as parameters, is one of the widely cited literature models in calculating the critical density of neutral electron traps that trigger the intrinsic breakdown of ultrathin oxides. This letter reports a new correlation between A/sub O/ and n/sub BD/, which can effectively reduce the cell-based model to one with the only fitting parameter n/sub BD/. Reproduction of charge-to-breakdown data has shown that (1) n/sub BD/ decreases for reduced oxide thicknesses and (2) the range of intrinsic breakdown is relatively narrowed for increasing areas. The work also addresses the ultimate thickness limit for breakdown, as set critically at n/sub BD/=1.
  • Keywords
    MOS capacitors; MOSFET; Monte Carlo methods; dielectric thin films; electric breakdown; electron traps; percolation; semiconductor device breakdown; semiconductor device models; CMOS reliability; MOS capacitors; TDDB; cell area; cell-based analytic statistical model; charge-to-breakdown data; correlated parameters; critical trap density; critical trap number per cell; fitting parameter; intrinsic breakdown; lattice-based Monte Carlo model; n-MOSFET devices; neutral electron traps; reduced oxide thickness; sphere-based Monte Carlo percolation simulation program; ultimate thickness limit; ultrathin oxides; CMOS process; CMOS technology; Dielectric breakdown; Electric breakdown; Electron traps; MOSFET circuits; Monte Carlo methods; Statistics; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.791930
  • Filename
    791930