Very thin film crystalline silicon solar cells on glass substrate fabricated at low temperature

Author

Yamamoto, Kenji

Author_Institution

Central Res. Labs., Kaneka Corp., Kobe, Japan

Volume

46

Issue

10

fYear

1999

fDate

10/1/1999 12:00:00 AM

Firstpage

2041

Lastpage

2047

Abstract

The performances of thin-film poly-Si solar cells with a thickness of less than 5 μm on a glass substrate have been investigated. The cell of glass/back reflector/n-i-p-type Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-type poly-Si laser was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 2.0 μm demonstrated an intrinsic efficiency of 10.7% (aperture 10.1%), the open-circuit voltage of 0.539 V and the short current density of 25.8 mA/cm² as independently confirmed by Japan Quality Assurance, which shows the no clear light-induced degradation. The optical and transport properties of poly Si cells are summarized

Keywords

elemental semiconductors; plasma CVD; semiconductor thin films; silicon; solar cells; 0.539 V; 10.7 percent; STAR structure; Si; glass substrate; light trapping; low temperature fabrication; p-i-n photodiode; plasma chemical vapor deposition; surface texture and enhanced absorption with a back reflector; thin film polycrystalline silicon solar cell; Crystallization; Glass; Indium tin oxide; Photovoltaic cells; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Surface texture; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.791994

Filename

791994