DocumentCode
1555886
Title
High-temperature CVD for crystalline-silicon thin-film solar cells
Author
Faller, Frank R. ; Hurrle, Albert
Author_Institution
Fraunhofer Inst. for Solar Energysyst., Freiburg, Germany
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
2048
Lastpage
2054
Abstract
The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement
Keywords
chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; 17.6 percent; 8 percent; Si; crystalline silicon thin film solar cell; epitaxial layer; high temperature deposition; thermal CVD; yield; Chemical vapor deposition; Crystallization; Inductors; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.791995
Filename
791995
Link To Document