• DocumentCode
    1555886
  • Title

    High-temperature CVD for crystalline-silicon thin-film solar cells

  • Author

    Faller, Frank R. ; Hurrle, Albert

  • Author_Institution
    Fraunhofer Inst. for Solar Energysyst., Freiburg, Germany
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    2048
  • Lastpage
    2054
  • Abstract
    The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that we have constructed and characterized. Our system fulfils basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of our system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement
  • Keywords
    chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; 17.6 percent; 8 percent; Si; crystalline silicon thin film solar cell; epitaxial layer; high temperature deposition; thermal CVD; yield; Chemical vapor deposition; Crystallization; Inductors; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.791995
  • Filename
    791995