• DocumentCode
    1555899
  • Title

    Photon emission in deep submicrometre N-channel SOI MOSFETs

  • Author

    Renn, S.H. ; Pelloie, J.L. ; Balestra, F.

  • Author_Institution
    CNRS, ENSERG, Grenoble, France
  • Volume
    33
  • Issue
    12
  • fYear
    1997
  • fDate
    6/5/1997 12:00:00 AM
  • Firstpage
    1093
  • Lastpage
    1094
  • Abstract
    Hot carrier effects are thoroughly investigated in deep submicrometre N-channel SOI MOSFETs using photon emission measurements. The maximal photon number (Nph) is obtained for the lower gate bias in the case of a sufficiently high drain voltage and/or small gate length. For low Vd and/or long channels, Nph is maximum around Vg≃Vd/2. These results are in agreement with those obtained in hot-carrier-induced degradations
  • Keywords
    MOSFET; hot carriers; luminescence; silicon-on-insulator; N-channel SOI MOSFET; NMOSFET; Si; deep submicron MOSFET; hot carrier effects; hot-carrier-induced degradations; photon emission measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970709
  • Filename
    588461
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555899