Mass production back-grinding/wafer-thinning technology for GaAs devices

Author

Nichiguchi, M. ; Goto, Noboru ; Sekiguchi, Takeshi ; Nishizawa, Hideaki ; Hayashi, Hideki ; Ono, Kimizo

Author_Institution

Sumitomo Electr. Ind. Ltd., Yokohama, Japan

Volume

13

Issue

3

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

528

Lastpage

533

Abstract

The first mass-production back-grinding technology applicable to a fully-automatic wafer-thinning process in GaAs device manufacturing is described. Excellent productivity has been realized because the brittleness of GaAs has been overcome. A mirror-like stress-free surface was obtained by utilizing the wafer-rotating downfeed grinding method with slight chemical etching. The thickness of the deformed layer due to back-grinding was evaluated at 0.6 μm. The wafer bow and the changes in electrical characteristics of GaAs devices caused by this layer were eliminated by chemical etching. The threshold voltages of GaAs MESFETs were confirmed to shift negatively by no more than 5 mV. This technology has been successfully demonstrated in several kinds of GaAs device fabrication processes

Keywords

III-V semiconductors; etching; gallium arsenide; grinding; semiconductor device manufacture; semiconductor technology; surface treatment; 0.6 micron; GaAs device manufacturing; MESFETs; back-grinding technology; brittleness; electrical characteristics; mirror-like stress-free surface; slight chemical etching; threshold voltages; wafer bow; wafer-rotating downfeed grinding method; wafer-thinning technology; Chemical technology; Electric variables; Etching; Fabrication; Gallium arsenide; MESFETs; Manufacturing processes; Mass production; Productivity; Threshold voltage;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.58855

Filename

58855