A physical alpha-power law MOSFET model

Author

Bowman, Keith A. ; Austin, Blanca L. ; Eble, John C. ; Tang, Xinghai ; Meindl, James D.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

34

Issue

10

fYear

1999

fDate

10/1/1999 12:00:00 AM

Firstpage

1410

Lastpage

1414

Abstract

A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original alpha-power law model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: 1) a subthreshold region of operation for evaluating the on/off current tradeoff that becomes a dominant low power design issue as technology scales, 2) the effects of vertical and lateral high field mobility degradation and velocity saturation, and 3) threshold voltage roll-off. Model projections for MOSFET CV/I indicate a 2X-performance opportunity compared to the National Technology Roadmap for Semiconductors (NTRS) extrapolations for the 250, 180, and 150 nm generations subject to maximum leakage current estimates of the roadmap. NTRS and model calculations converge at the 70 nm technology generation, which exhibits pronounced on/off current interdependence for low power gigascale integration

Keywords

CMOS integrated circuits; MOSFET; integrated circuit modelling; low-power electronics; semiconductor device models; HSPICE simulations; MOSFET model; NTRS extrapolations; compact physics-based model; lateral high field mobility degradation; low power circuit performance; low power design issue; low power gigascale integration; maximum leakage current estimates; on/off current tradeoff; physical alpha-power law model; subthreshold region; threshold voltage rolloff; velocity saturation; vertical high field mobility degradation; Circuit optimization; Circuit simulation; Current measurement; Joining processes; MOSFET circuits; Mathematical model; Power MOSFET; Power generation; Power measurement; Velocity measurement;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.792617

Filename

792617