Stresses in thin film metallization

Author

Hodge, Thomas C. ; Bidstrup-Allen, Sue Ann ; Kohl, Paul A.

Author_Institution

Michelin Americas Res. & Dev. Corp., Greenville, SC, USA

Volume

20

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

241

Lastpage

250

Abstract

Stresses in conductors used in microelectronic interconnections are a critical processing and reliability issue. This work examines: 1) the temperature-dependent stress behavior of sputtered and electroplated silver and gold films on silicon substrates; 2) the use of wafer curvature using multiple substrates for the simultaneous determination of coefficient of thermal expansion (CTE) and modulus for thin films. The stress-temperature behavior of gold films on gallium arsenide and aluminum substrates was measured to determine its CTE and modulus. It is shown that electroplated noble metal films have lower stresses than sputtered films, due to larger grain sizes

Keywords

elastic moduli; electroplated coatings; grain size; internal stresses; metallic thin films; metallisation; sputtered coatings; thermal expansion; thermal stresses; Ag; Al; Au; GaAs; Si; coefficient of thermal expansion; conductor; electroplating; grain size; microelectronic interconnection; modulus; multiple substrate; noble metal; processing; reliability; sputtering; temperature-dependent stress; thin film metallization; wafer curvature; Conductors; Gold; Metallization; Microelectronics; Semiconductor films; Silver; Sputtering; Substrates; Thermal stresses; Transistors;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.588580

Filename

588580