Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

Author

Gundlach, David J. ; Jia, LiLi ; Jackson, Thomas N.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

22

Issue

12

fYear

2001

Firstpage

571

Lastpage

573

Abstract

We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm/sup 2//V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10/sup 7/, and subthreshold slope as low as 0.7 V/decade.

Keywords

carrier mobility; charge injection; flat panel displays; molecular electronics; organic semiconductors; surface treatment; thin film transistors; -0.1 V; OTFTs; Si; charge injection; chemically-modified drain contacts; chemically-modified source contacts; drain current; drain-source voltage; flat panel displays; heavily doped thermally oxidized single-crystal Si substrates; linear field-effect mobility; linear region characteristics; on/off current ratio; pentacene TFT; pentacene active layer organic thin film transistors; subthreshold slope; Electrodes; Flat panel displays; Organic chemicals; Organic semiconductors; Organic thin film transistors; Pentacene; Silicon; Substrates; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974580

Filename

974580