DocumentCode
1557183
Title
The impact of postbreakdown gate leakage on MOSFET RF performances
Author
Pantisano, Luigi ; Cheung, K.P.
Author_Institution
IMEC, Leuven, Belgium
Volume
22
Issue
12
fYear
2001
Firstpage
585
Lastpage
587
Abstract
When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from dc to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.
Keywords
MOSFET; UHF field effect transistors; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; RF performances; gain reduction; gate-oxide breakdown; input/output mismatch; leakage current increase model; leakage path; postbreakdown gate leakage; Breakdown voltage; CMOS technology; Electric breakdown; Gate leakage; Leakage current; MOSFET circuits; Performance gain; Predictive models; Radio frequency; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.974585
Filename
974585
Link To Document