A new optoelectronic integrated device for light-amplifying optical switch (LAOS)

Author

Jit, Satyabrata ; Pal, B.B.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2732

Lastpage

2739

Abstract

A new optoelectronic integrated device is proposed for a light-amplifying optical switch (LAOS). The device is composed of an optical field-effect transistor (OPFET) in series with a light source which may be either a double heterostructure light-emitting diode (LED) or laser diode (LD). A quantitative circuit model for the proposed LAOS is presented and theoretical investigation is carried out for developing a current-voltage (I-V) relation for the device. It is shown analytically that switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR) when a voltage greater than the breakover voltage is applied

Keywords

Schottky gate field effect transistors; integrated optoelectronics; light emitting diodes; negative resistance devices; optical feedback; optical switches; semiconductor lasers; I-V relation; MESFET; NDR region; OEICs; breakover voltage; circuit model; current-voltage relation; double heterostructure LED; high current state; laser diode; light source; light-amplifying optical switch; light-emitting diode; low current state; negative differential resistance; optical FET; optical feedback; optical field-effect transistor; optoelectronic integrated device; Communication switching; Diode lasers; FETs; Heterojunctions; Light emitting diodes; Optical bistability; Optical devices; Optical switches; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974697

Filename

974697