Experimental investigation of linear amplification characteristics of radio-frequency thin-film SOI power MOSFETs

Author

Matsumoto, Satoshi ; Sakai, Tatsuo

Author_Institution

NTT Telecommun. Energy Labs., Kanagawa, Japan

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2911

Lastpage

2916

Abstract

Linear amplification characteristics of RF thin-film SOI power MOSFETs have been investigated under π/4 shift quadrature phase shift keying (QPSK) modulation. They were found to depend on both the gate and drain bias conditions. There are optimum bias conditions which give the best linear amplification characteristics. They were also found to depend on the pattern layout and gate electrode resistivity. A shorter finger length and lower gate resistance resulted in good linear amplification characteristics. The linear amplification characteristics were independent of the substrate resistivity

Keywords

power MOSFET; quadrature phase shift keying; silicon-on-insulator; thin film transistors; RF thin film SOI power MOSFET; drain bias; finger length; gate bias; gate electrode resistivity; linear amplification characteristics; pattern layout; quadrature phase shift keying modulation; substrate resistivity; Cellular phones; Conductivity; Electrodes; Fabrication; MMICs; MOSFETs; Radio frequency; Substrates; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974728

Filename

974728