DocumentCode
1557657
Title
Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments
Author
Ohkawa, Takeshi ; Nakamura, Osamu ; Sugawa, Shigetoshi ; Aharoni, Herzl ; Ohmi, Tadahiro
Author_Institution
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Volume
48
Issue
12
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2957
Lastpage
2959
Abstract
A new two-step processing combination, for MOS devices improvement, is presented. It is composed of a pregate oxidation of (100) Si surface atomic scale flattening, which improves only the device breakdown reliability. Adding a postgate oxidation annealing step, using nitrogen monoxide (NO) gas mixture, reduces the degradation of the leakage current, which results from current stress application. A MOSFET with a gate oxide grown on an atomic scale flattened Si surface, exhibits a superior ID-VD characteristics, with respect to MOSFET fabricated on conventionally treated Si surface
Keywords
MOSFET; annealing; elemental semiconductors; leakage currents; oxidation; semiconductor device breakdown; semiconductor device reliability; silicon; silicon compounds; surface treatment; I-V characteristics; MOS device; MOSFET; NO; Si; Si(100) surface atomic scale flattening; Si-SiO2; Si/SiO2 interface treatment; breakdown reliability; current stress; gate injection mode; gate oxide; insulation properties; leakage current; nitrogen monoxide gas mixture; post-gate oxidation annealing; pre-gate oxidation; two-step processing; Annealing; Degradation; Electric breakdown; Insulation; Leakage current; MOS devices; MOSFET circuits; Nitrogen; Oxidation; Surface treatment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.974737
Filename
974737
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