Two-dimensional quantum effects in nanoscale MOSFETs

Author

Pirovano, Agostino ; Lacaita, Andrea L. ; Spinelli, Alessandro S.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

25

Lastpage

31

Abstract

In this paper, a full two-dimensional (2-D) quantum mechanical (QM) device simulator for deep submicron MOSFETs is presented. The model couples a 2-D Schrodinger-Poisson solver with a semiclassical transport model. The validity of the proposed model is first tested against a QM model for transport, developed as a benchmark. Then, QM effects on nanoscale MOSFETs performance are quantitatively addressed and discussed. It is shown that QM effects strongly influence the device performance, namely subthreshold slope drain-induced barrier lowering and short-channel effects. These results show that full QM simulations will become a mandatory issue for nanoscale MOSFETs modeling and design

Keywords

MOSFET; Poisson equation; Schrodinger equation; inversion layers; nanotechnology; quantum interference phenomena; semiconductor device models; 2D quantum effects; 2D quantum mechanical device simulator; Fermi-Dirac probability distribution; Schrodinger-Poisson solver; charge distribution; device performance; drift-diffusion; finite-element code; nanoscale MOSFET; nonlinear Poisson problem; quantized inversion layer; semiclassical transport model; short-channel effects; threshold slope drain-induced barrier lowering; Benchmark testing; Electrons; MOSFETs; Nanoscale devices; Power dissipation; Quantum mechanics; Schrodinger equation; Silicon; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974744

Filename

974744